2SD2526 2003-02-04 1 toshiba transistor silicon npn triple diffused type (darlington power transistor) 2SD2526 high power switching applications hammer drive, pulse motor drive applications high dc current gain: h fe = 2000 (min) (v ce = 3 v, i c = 3 a) low saturation voltage: v ce (sat) = 1.5 v (max) (i c = 3 a) complementary to 2sb1641 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 7 v dc 5 collector current pulse i c 8 a base current i b 0.5 a collector power dissipation p c 1.8 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-10t1a weight: 1.5 g (typ.) base emitter 5 k ? 150 ? collector
2SD2526 2003-02-04 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 100 v, i e = 0 D D 100 a emitter cut-off current i ebo v eb = 6 v, i c = 0 D D 2.5 ma collector-emitter breakdown voltage v (br) ceo i c = 30 ma, i b = 0 100 D D v h fe (1) v ce = 3 v, i c = 3 a 2000 D 15000 dc current gain h fe (2) v ce = 3 v, i c = 5 a 1000 D D v ce (sat) (1) i c = 3 a, i b = 6 ma D 1.1 1.5 collector-emitter saturation voltage v ce (sat) (2) i c = 5 a, i b = 20 ma D 1.3 2.5 v base-emitter saturation voltage v be (sat) i c = 3 a, i b = 6 ma D 1.7 2.5 v turn-on time t on D 1.0 D storage time t stg D 4.0 D switching time fall time t f i b1 = ? i b2 = 6 ma, duty cycle 1% D 2.5 D s marking explanation of lot no. input v cc = 30 v i b1 i b2 output 10 ? i b1 20 s i b2 product no. lot no. d2526 month of manufacture (january to december are denoted by letters a to l respectively.) year of manufacture (last decimal digit of the year of manufacture)
2SD2526 2003-02-04 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) base current i b (ma) v ce ? i b collector-emitter voltage v ce (v) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) 0 0 2 4 2 4 6 8 5 common emitter ta = 25c 10 6 8 i b = 0.3 ma 3 2 1 0.7 0.5 0 1.5 0 0 2 4 0.8 1.6 2.4 3.2 common emitter v ce = 3 v 4.0 6 8 ta = 100c 25 ? 55 30000 0.05 common emitter v ce = 3 v 200 1000 5000 10000 0.1 0.3 3 5 ta = 100c 25 ? 55 20 0.5 1 10 500 3000 0.1 10 ta = ? 55c 100 25 common emitter i c /i b = 250 10 0.3 0.3 0.5 1 3 5 0.5 1 3 5 0.1 10 ta = ? 55c 100 25 common emitter i c /i b = 250 10 0.3 0.3 0.5 1 3 5 0.5 1 3 5 0.1 2.4 1 common emitter ta = 2 5 c 0 0.3 0.5 1 3 10 100 300 0.4 0.8 1.2 1.6 2.0 5 30 50 i c = 8 a 3 5 0.1
2SD2526 2003-02-04 4 collector-emitter voltage v ce (v) safe operating area collector current i c (a) ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 0 0 25 50 75 100 125 175 0.4 1.6 2.0 1.2 0.8 150 1 10 100 0.03 0.1 10 0.05 0.1 0.3 0.5 1 3 i c max (pulsed) * v ceo max 1 ms * 10 ms * 100 s * * : single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. i c max (continuous) dc operation ta = 25c 0.01 5 pulse width t w (s) r th ? t w transient thermal resistance r th (c/w) 0.001 1000 0.01 0.1 100 10 1 300 10 100 30 0.3 3 1 curves should be applied in thermal limited area. (single nonrepetitive pulse) no heat sink ta = 2 5 c
2SD2526 2003-02-04 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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